Nitrogen Doped Graphene Synthesis and Evaluation of Its Electrical Properties
Swarnabala Jena *
Department of Chemistry, College of Basic Science and Humanities, Odisha University of Agriculture and Technology, Bhubaneswar, Odisha, India.
Raj Gopal Mishra
Department of Chemistry, College of Basic Science and Humanities, Odisha University of Agriculture and Technology, Bhubaneswar, Odisha, India.
*Author to whom correspondence should be addressed.
Abstract
In the current research, Nitrogen-doped graphene (NGr), is an emergent nanomaterial for energy applications. Graphene oxide (GO) was synthesized using an improved Hummers method. For nitrogen doping a hydrothermal treatment was carried out with urea an ecofriendly material. The synthesized sample was characterized using Scanning Electron Microscopy (SEM), Fourier Transformation Infrared Spectroscopy (FTIR), UV-Visible Spectroscopy, Raman Spectroscopy, and X-ray Diffraction (XRD). FTIR peaks at 1154cm-1, 1588 cm-1, 3365cm-1 represents the C-N, C=C, N-H stretching vibrations respectively. The results obtained from LCR meter (high Er value of 8000 µS/cm) demonstrate that nitrogen doping effectively enhancing the electrical conductivity and dielectric properties of graphene. The NGr exhibits a significant increase in conductivity with rising temperature and frequency, indicating its potential for use in high-frequency electronic devices, supercapacitors, and fuel cells. This study provides valuable insights into the scalable production and application of nitrogen-doped graphene in next-generation energy and electronic devices.
Keywords: Graphene, nitrogen doped graphene, electrical conductivity, dielectric constant, LCR meter